leshan radio company, ltd. s-lsi1012n3t5g 10000/tape&reel ordering information device shipping lsi1012n3t5g marking drain gate 3 1 2 source a2 features trenchfet power mosfet: 1.8-v rated gate-source esd protected: 2000 v high-side switching low on-resistance: 0.7 low threshold: 0.8 v (typ) fast switching speed: 10 ns benefits ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation applications drivers: relays, solenoids, lamps, hammers, displays, memories battery operated systems power supply converter circuits load/power switching cell phones, pagers n-channel 1.8-v (g-s) mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds 20 v gate-source v oltage v gs 6 v continuous drain current (t j = 150 c) b t a = 25 c i d 600 500 c on ti nuous d ra i n c urren t (t j = 150 c) b t a = 85 c i d 400 350 ma pulsed drain current a i dm 1000 ma continuous source current (diode conduction) b i s 275 250 maximum power dissipation b t a = 25 c 250 maximum power dissipation b p d 500 mw t a = 25 c p d mw operating junction and storage temperature range t j , t stg ? -55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board. rev .o 1/6 lsi1012n3t5g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lsi1012n3t5g 1 2 3 thermal resistance, junction to ambient r c/w ja sot883
leshan radio company, ltd. specifications (t a = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 0.9 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 0.5 1.0 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 0.3 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 85 c 5 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 700 ma v gs = 4.5 v, i d = 600 ma 0.41 0.70 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 500 m a 0.53 0.85 ds(on) v gs = 1.8 v, i d = 350 m a 0.70 1.25 forward t ransconductance a g fs v ds = 10 v, i d = 400 ma 1.0 s diode forward voltage a v sd i s = 150 ma, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 750 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 250 ma 75 pc gate-drain charge q gd 225 turn-on delay time t d(on) 5 rise time t r v dd = 10 v, r l = 47 5 ns turn-off delay time t d(off) v dd = 10 v , r l = 47 i d 200 ma, v gen = 4.5 v, r g = 10 25 ns fall time t f 11 notes c. pulse test; pulse width 300 s, duty cycle 2%. d. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. lsi1012n3t5g , s-lsi1012n3t5g rev .o 2/6
leshan radio company, ltd. typical characteristics (t a = 25 c unless noted) 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thru 1.8 v t c = ? 55 c 125 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) 1 v i d - drain current (ma) ? on-resistance ( r ds(on) ) 0 20 40 60 80 100 0 4 8 12 16 20 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 v ds ? drain-to-source voltage (v) c rss c oss c iss i d ? drain current (ma) v gs = 1.8 v on-resistance vs. drain current c ? capacitance (pf) capacitance v gs = 4.5 v v gs = 2.5 v r ds(on) ? on-resiistance (normalized) 0.60 0.80 1.00 1.20 1.40 1.60 ? 50 ? 25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 v ds = 10 v i d = 250 ma v gs = 4.5 v i d = 600 ma gate charge ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs on-resistance vs. junction temperature t j ? junction temperature ( c) v gs = 1.8 v i d = 350 ma rev .o 3/6 lsi1012n3t5g , s-lsi1012n3t5g
leshan radio company, ltd. typical characteristics (t a = 25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 0123456 i d = 350 ma 1000 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (ma) i s i d = 200 ma t j = 125 c t j = 25 c t j = ? 55 c 10 100 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 ? 50 ? 25 0 25 50 75 100 125 i d = 0.25 ma threshold voltage variance vs. temperature variance (v) v gs(th) t j ? temperature ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 25 0 25 50 75 100 125 i gss vs. temperature t j ? temperature ( c) i gss ? ( a) v gs = 4.5 v 0 1 2 3 4 5 6 7 ? 50 ? 25 0 25 50 75 100 125 bv gss vs. temperature t ? temperature ( c) bv gss ? gate-to-source breakdown voltage (v) rev .o 4/6 lsi1012n3t5g , s-lsi1012n3t5g
leshan radio company, ltd. typical characteristics (t a = 25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient (sc-75a) square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 833 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 11 0 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effecti ve transient thermal impedance rev .o 5/6 lsi1012n3t5g , s-lsi1012n3t5g
leshan radio company, ltd. rev .o 6/6 lsi1012n3t5g , s-lsi1012n3t5g sot883 unit:mm dimension outline:
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